Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
Journal of Vacuum Science and Technology B, 28(1), C1B1- B5, March 2010
Stephen P. Kelty, Ph.D.
Department of Chemistry and Biochemistry
Mehmet A Sahiner, Ph.D.
Department of Physics
D. Giubertoni, M. G. Pepponi, S. Gennaro, M. Bersani, M. Kah, K.J. Kirkby, R. Doherty, M.A. Foad, F. Meirer, C. Streli, J.C. Woicik & P. Pianetta
In this work, the authors study the deactivation of laser annealed (LA) ultrashallow arsenic distributions in silicon using Hall effect measurements, extended x-ray absorption fine structure spectroscopy, and secondary ion mass spectrometry.